Gas-Doped Fz Monorystalline Silicon wafer:
Applying the doping impurities diffusion theory, the ingot pulling process was added by the atmosphere of doping-impurities gas. The crystal resistivity is controlled by managing density of the gas. Such products are of semiconductor power devices, IGBT and high-efficient solar cell usage.
GDFZ Mono- crystalline Silicon Slice Specification
Type | Diameter(mm) | Thickness(um) | Resistivity(Ωcm) |
N | 26-150 | ≥150 | 0.01-100 |
We can make solution according to client’s requirement.
